G2R1000MT33J
- Manufacturer:
- GeneSiC Semiconductor
- Part Number:
- G2R1000MT33J
- Category:
- Single FETs, MOSFETs
- Description:
- SIC MOSFET N-CH 4A TO263-7
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 672
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- GeneSiC Semiconductor
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 3300 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 238 pF @ 1000 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) :
- 74W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2A, 20V
- Supplier Device Package :
- TO-263-7
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +20V, -5V
- Vgs(th) (Max) @ Id :
- 3.5V @ 2mA
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