G3R20MT17N

TYPE

DESCRIPTION

Manufacturer :

GeneSiC Semiconductor

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

400 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

10187 pF @ 1000 V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation (Max) :

523W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

26mOhm @ 75A, 15V

Supplier Device Package :

SOT-227

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2.7V @ 15mA