2301H

TYPE

DESCRIPTION

Manufacturer :

Goford Semiconductor

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 2.5 V

Input Capacitance (Ciss) (Max) @ Vds :

405 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

125mOhm @ 3A, 10V

Supplier Device Package :

SOT-23-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

2V @ 250µA