G5N02L

TYPE

DESCRIPTION

Manufacturer :

Goford Semiconductor

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

780 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

1.25W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

18mOhm @ 4.2A, 10V

Supplier Device Package :

SOT-23-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1V @ 250µA