CGD65B130S2-T13
- Manufacturer:
- Cambridge GaN Devices
- Part Number:
- CGD65B130S2-T13
- Category:
- Single FETs, MOSFETs
- Description:
- 650V GAN HEMT, 130MOHM, DFN5X6.
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 4,965
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Cambridge GaN Devices
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 9V, 20V
- FET Feature :
- Current Sensing
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 2.3 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 182mOhm @ 900mA, 12V
- Supplier Device Package :
- 8-DFN (5x6)
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +20V, -1V
- Vgs(th) (Max) @ Id :
- 4.2V @ 4.2mA
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