GC120N65QF

TYPE

DESCRIPTION

Manufacturer :

Goford Semiconductor

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

68 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3100 pF @ 275 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

96.1W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

120mOhm @ 38A, 10V

Supplier Device Package :

TO-247

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA