SI2301S-2.3A

TYPE

DESCRIPTION

Manufacturer :

MDD

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

3.3V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

330 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

225mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

90mOhm @ 3A, 4.5V

Supplier Device Package :

SOT-23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 250µA