5HN02N

TYPE

DESCRIPTION

Manufacturer :

onsemi

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.86 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

22 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation (Max) :

400mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

2.3Ohm @ 100mA, 10V

Supplier Device Package :

3-NP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 100µA