HN1B01FU-Y(L,F,T)

Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Part Number:
HN1B01FU-Y(L,F,T)
Category:
Bipolar Transistor Arrays
Description:
TRANS NPN/PNP 50V 0.15A US6
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
9,275

Specifications

TYPE
DESCRIPTION
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Category :
Bipolar Transistor Arrays
Current - Collector (Ic) (Max) :
150mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA, 6V
Frequency - Transition :
120MHz
Mounting Type :
Surface Mount
Operating Temperature :
125°C (TJ)
Package / Case :
6-TSSOP, SC-88, SOT-363
Power - Max :
200mW
Product Status :
Active
Supplier Device Package :
US6
Transistor Type :
NPN, PNP
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50V

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